型号 SI6973DQ-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET P-CH DUAL G-S 20V 8TSSOP
SI6973DQ-T1-GE3 PDF
代理商 SI6973DQ-T1-GE3
标准包装 3,000
系列 TrenchFET®
FET 型 2 个 P 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 4.1A
开态Rds(最大)@ Id, Vgs @ 25° C 30 毫欧 @ 4.8A,4.5V
Id 时的 Vgs(th)(最大) 450mV @ 250µA
闸电荷(Qg) @ Vgs 30nC @ 4.5V
功率 - 最大 830mW
安装类型 表面贴装
封装/外壳 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装 8-TSSOP
包装 带卷 (TR)
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